MULTI-STEP METHOD AND APPARATUS FOR ETCHING COMPOUNDS CONTAINING A METAL

摘要

A system and method for etching a material, including a compound having a formulation of XYZ, wherein X and Y are one or more metals and Z is selected from one or more Group 13-16 elements, such as carbon, nitrogen, boron, silicon, sulfur, selenium, and tellurium, are disclosed. The method includes a first etch process to form one or more first volatile compounds and a metal-depleted layer and a second etch process to remove at least a portion of the metal-depleted layer.

主权项

1. A method of etching material, the method comprising the steps of:
in a reaction chamber, exposing a material comprising a formula XYZ, wherein X and Y are one or more metals and Z is selected from one or more Group 13-16 elements, to a first etch chemistry to form one or more first volatile compounds and a metal-depleted material; removing the one or more first volatile compounds from the reaction chamber; exposing the metal-depleted material to a second etch chemistry to react with the metal-depleted material to form one or more second volatile compounds; and removing the one or more second volatile compound.