| 发明名称 |
CRYSTAL LAMINATE STRUCTURE AND METHOD FOR PRODUCING SAME |
| 摘要 |
A crystal laminate structure, in which crystals can be epitaxially grown on a β-Ga2O3-based substrate with high efficiency to produce a high-quality β-Ga2O3-based crystal film on the substrate; and a method for producing the crystal laminate structure are provided. The crystal laminate structure includes: a β-Ga2O3-based substrate, of which the major face is a face that is rotated by 50 to 90° inclusive with respect to face; and a β-Ga2O3-based crystal film which is formed by the epitaxial crystal growth on the major face of the β-Ga2O3-based substrate. |
| 申请公布号 |
US2014217554(A1) |
申请公布日期 |
2014.08.07 |
| 申请号 |
US201214343355 |
申请日期 |
2012.08.02 |
| 申请人 |
Sasaki Kohei |
发明人 |
Sasaki Kohei |
| 分类号 |
H01L29/04;H01L21/02 |
主分类号 |
H01L29/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A crystal laminate structure, comprising:
a β-Ga2O3-based substrate comprising as a main surface a plane rotated by not less than 50° and not more than 90° with respect to a (100) plane; and β-Ga2O3-based crystal film that is formed by epitaxially growing a crystal on the main surface of the β-Ga2O3-based substrate. |
| 地址 |
Tokyo JP |
