RECESSED ACCESS DEVICES AND GATE ELECTRODES

摘要

Recessed access transistor devices used with semiconductor devices may include gate electrodes having materials with multiple work functions, materials that are electrically isolated from each other and supplied with two or more voltage supplies, or materials that create a diode junction within the gate electrode.

主权项

1. A gate electrode, comprising:
a first gate material in a trench in a semiconductor substrate, the first gate material having a first work function associated therewith; and a second gate material at least partially within the trench, the second gate material having a second work function different from the first work function, the first gate material electrically isolated from the second gate material.