发明名称 SUBSTRATE PROCESSING APPARATUS
摘要 There is provided a substrate processing apparatus including: a substrate holder configured to hold a substrate on which a resist pattern is formed; a rinse solution supply unit configured to supply a rinse solution onto the substrate held by the substrate holder; a vapor supply unit configured to supply vapor of a first processing solution, which hydrophobicizes the resist pattern, onto the substrate on which the rinse solution is supplied from the rinse solution supply unit; and a rinse solution removing unit configured to remove the rinse solution from the substrate in an atmosphere including the vapor of the first processing solution supplied from the vapor supply unit.
申请公布号 US2014216506(A1) 申请公布日期 2014.08.07
申请号 US201414245208 申请日期 2014.04.04
申请人 TOKYO ELECTRON LIMITED 发明人 Inatomi Yuichiro
分类号 H01L21/67 主分类号 H01L21/67
代理机构 代理人
主权项 1. A substrate processing apparatus comprising: a substrate holder configured to hold a substrate on which a resist pattern is formed; a rinse solution supply unit configured to supply a rinse solution onto the substrate held by the substrate holder; a vapor supply unit configured to supply vapor of a first processing solution, which hydrophobicizes the resist pattern, onto the substrate on which the rinse solution is supplied from the rinse solution supply unit; and a rinse solution removing unit configured to remove the rinse solution from the substrate in an atmosphere including the vapor of the first processing solution supplied from the vapor supply unit.
地址 Tokyo JP