发明名称 SILICON WAFER CLEANING METHOD
摘要 A silicon wafer cleaning method is provided. Firstly, a silicon wafer is provided. Then, a polymer cleaning step is performed to clean a surface of the silicon wafer. After the polymer cleaning step, a deionized water/carbon dioxide gas discharging step is performed, so that the charges accumulated on the surface of the silicon wafer can be instantly removed. After the deionized water/carbon dioxide gas discharging step, two or more particle removing steps are performed. In addition, an air-jet step is performed during the time interval between every two sub-steps of a single particle removing step. Consequently, the cleaning efficiency of removing the particles will be enhanced.
申请公布号 US2014216504(A1) 申请公布日期 2014.08.07
申请号 US201313760068 申请日期 2013.02.06
申请人 UNITED MICROELECTRONICS CORPORATION 发明人 XIA Jun;LU Hui;QIAN Li-Sen;TAN Chee-Wei
分类号 B08B3/04 主分类号 B08B3/04
代理机构 代理人
主权项 1. A silicon wafer cleaning method, comprising steps of: providing a silicon wafer; performing a polymer cleaning step to clean a surface of the silicon wafer; performing a deionized water/carbon dioxide gas discharging step to clean the surface of the silicon wafer after the polymer cleaning step; and performing a particle removing step and an air-jet step to clean the surface of the silicon wafer after the deionized water/carbon dioxide gas discharging step.
地址 Hsinchu TW