发明名称 |
SILICON WAFER CLEANING METHOD |
摘要 |
A silicon wafer cleaning method is provided. Firstly, a silicon wafer is provided. Then, a polymer cleaning step is performed to clean a surface of the silicon wafer. After the polymer cleaning step, a deionized water/carbon dioxide gas discharging step is performed, so that the charges accumulated on the surface of the silicon wafer can be instantly removed. After the deionized water/carbon dioxide gas discharging step, two or more particle removing steps are performed. In addition, an air-jet step is performed during the time interval between every two sub-steps of a single particle removing step. Consequently, the cleaning efficiency of removing the particles will be enhanced. |
申请公布号 |
US2014216504(A1) |
申请公布日期 |
2014.08.07 |
申请号 |
US201313760068 |
申请日期 |
2013.02.06 |
申请人 |
UNITED MICROELECTRONICS CORPORATION |
发明人 |
XIA Jun;LU Hui;QIAN Li-Sen;TAN Chee-Wei |
分类号 |
B08B3/04 |
主分类号 |
B08B3/04 |
代理机构 |
|
代理人 |
|
主权项 |
1. A silicon wafer cleaning method, comprising steps of:
providing a silicon wafer; performing a polymer cleaning step to clean a surface of the silicon wafer; performing a deionized water/carbon dioxide gas discharging step to clean the surface of the silicon wafer after the polymer cleaning step; and performing a particle removing step and an air-jet step to clean the surface of the silicon wafer after the deionized water/carbon dioxide gas discharging step. |
地址 |
Hsinchu TW |