| 摘要 |
<p>An embodiment of the present application relates to a thin film transistor array substrate, defining a plurality of pixel areas corresponding to a display area, comprising: a semiconductor layer which includes a sensing transistor formed at an intersection between a sense line and a reference line, wherein the sensing transistor is formed on a first gate insulation film, an active area overlapped with at least a portion of a first gate electrode, source and drain areas at either side of the active area, and an elongation area extended in a direction parallel with the sense line in the source area; a second gate insulation film formed on the active area; and a second gate electrode formed on the second gate insulation film. The sensing transistor is covered by an interlayer insulation film formed on a front surface over the first gate insulation film. The reference line is formed on the interlayer insulation film, and is connected to an elongated source area through a first contact hole, which penetrates the interlayer insulation film such that a portion of the elongation area is exposed.</p> |
