| 摘要 |
A double patterning method of forming a plurality of hole patterns having a small pitch using etch selectivities includes forming a patterning mask pattern defining a preliminary hole exposing an upper surface of a buffer mask layer, an inner spacer exposing the upper surface of the buffer mask layer on an inner wall of the preliminary hole, a buffer mask pattern having a first hole, and a core insulating pattern filling the preliminary hole and the first hole, an outer spacer to expose a first portion of the patterning mask pattern on the exposed portion of the outer side of the inner spacer, and an empty space exposing a first portion of the buffer mask pattern. A second portion of the patterning mask pattern and a second portion of the buffer mask pattern are exposed. A second hole is formed by removing the second portion of the buffer mask pattern. |
| 主权项 |
1. A method of forming hole patterns, the method comprising:
sequentially stacking an upper pattering mask layer, a middle patterning mask layer, a lower patterning mask layer, and an upper buffer mask layer on a target layer; forming an upper patterning mask pattern, a middle patterning mask pattern, and a lower patterning mask pattern which collectively define a preliminary hole selectively exposing an upper surface of the upper buffer mask layer by selectively removing the upper patterning mask layer, the middle patterning mask layer, and the lower patterning mask layer; forming an inner spacer exposing a portion of the upper surface of the upper buffer mask layer on an inner wall of the preliminary hole; forming an upper buffer mask pattern by removing the exposed portion of the upper surface of the upper buffer mask layer using the upper patterning mask pattern and the inner spacer as an etch mask; forming a core insulating pattern filling the preliminary hole; exposing a portion of an outer side of the inner spacer and the middle patterning mask pattern by removing the upper patterning mask pattern; forming an outer spacer on the exposed portion of the outer side of the inner spacer, wherein the outer spacer exposes a portion of the middle patterning mask pattern; selectively exposing a first portion of the lower patterning mask pattern by removing the exposed portion of the middle patterning mask pattern; forming an empty space selectively exposing a first portion of the upper buffer mask pattern by removing the exposed first portion of the lower patterning mask pattern; forming a patterning barrier pattern in the empty space; exposing a second portion of the lower patterning mask pattern by removing the outer spacer and the middle patterning mask pattern; exposing a second portion of the upper buffer mask pattern by removing the exposed second portion of the lower patterning mask pattern; removing the exposed second portion of the upper buffer mask pattern; and removing the core insulating pattern, the inner spacer, and the patterning barrier pattern. |
