| 发明名称 |
SEMICONDUCTOR MEMORY DEVICE INCLUDING BULK VOLTAGE GENERATION CIRCUIT |
| 摘要 |
A semiconductor memory device includes a bulk voltage generation circuit configured to interrupt driving of a bulk voltage in response to an exit signal which is generated in synchronization with a time at which a power-down mode is ended, and discharge charges of a first node from which the bulk voltage is outputted, in response to the exit signal; and an internal circuit including a MOS transistor which is supplied with the bulk voltage. |
| 申请公布号 |
US2014219040(A1) |
申请公布日期 |
2014.08.07 |
| 申请号 |
US201313963614 |
申请日期 |
2013.08.09 |
| 申请人 |
SK hynix Inc. |
发明人 |
HWANG Mi Hyun |
| 分类号 |
G11C5/14 |
主分类号 |
G11C5/14 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor memory device comprising:
a bulk voltage generation circuit configured to interrupt driving of a bulk voltage in response to an exit signal which is generated in synchronization with a time at which a power-down mode is ended, and discharge charges of a first node from which the bulk voltage is outputted, in response to the exit signal; and an internal circuit including a MOS transistor which is supplied with the bulk voltage. |
| 地址 |
Icheon-si KR |
