| 发明名称 |
SYSTEM AND METHOD OF PROGRAMMING A MEMORY CELL |
| 摘要 |
A method includes creating a breakdown condition at a semiconductor transistor structure that includes an overlap region and a channel region. The breakdown condition is created by causing a first voltage difference between a gate of the semiconductor transistor structure and the overlap region to exceed a breakdown voltage of the semiconductor transistor structure while maintaining a second voltage difference between the gate and the channel region at less than the breakdown voltage. |
| 申请公布号 |
US2014219015(A1) |
申请公布日期 |
2014.08.07 |
| 申请号 |
US201313759310 |
申请日期 |
2013.02.05 |
| 申请人 |
QUALCOMM INCORPORATED |
发明人 |
Li Xia;Kang Seung H.;Zhu Xiaochun |
| 分类号 |
G11C7/00;G11C11/40 |
主分类号 |
G11C7/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
creating a breakdown condition at a semiconductor transistor structure that includes an overlap region and a channel region by causing a first voltage difference between a gate and the overlap region to exceed a breakdown voltage of the semiconductor transistor structure while maintaining a second voltage difference between the gate and the channel region at less than the breakdown voltage. |
| 地址 |
San Diego CA US |
