发明名称 |
OTP CELL ARRAY INCLUDING PROTECTED AREA, SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME, AND METHOD OF PROGRAMMING THE SAME |
摘要 |
A method of programming a memory device including a one-time programmable (OTP) cell array configured to include at least one of a protected area and a programmable area are disclosed. The method includes receiving a fuse-program command to initiate a fuse-programming operation; checking whether the programmable area exists in the OTP cell array, terminating the fuse-programming operation when the OTP cell array does not include the programmable area, performing a fuse-programming operation on the programmable area when the OTP cell array includes the programmable area thereby programming fuses to create a fuse-programmed area; setting the fuse-programmed area of the OTP cell array as the protected area. |
申请公布号 |
US2014219000(A1) |
申请公布日期 |
2014.08.07 |
申请号 |
US201314107199 |
申请日期 |
2013.12.16 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
OH Chi-Sung;PARK Chul-Sung;HEO Nak-Won;SOHN Dong-Hyun |
分类号 |
G11C17/16;G11C29/52;G06F12/14 |
主分类号 |
G11C17/16 |
代理机构 |
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代理人 |
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主权项 |
1. A method of programming a memory device including a one-time programmable (OTP) cell array configured to include at least one of a protected area and a programmable area, the method comprising:
receiving a fuse-program command to initiate a fuse-programming operation; checking whether the programmable area exists in the OTP cell array; terminating the fuse-programming operation when the OTP cell array does not include the programmable area; performing a fuse-programming operation on the programmable area when the OTP cell array includes the programmable area thereby programming fuses to create a fuse-programmed area; setting the fuse-programmed area of the OTP cell array as the protected area. |
地址 |
Suwon-si KR |