发明名称 OTP CELL ARRAY INCLUDING PROTECTED AREA, SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME, AND METHOD OF PROGRAMMING THE SAME
摘要 A method of programming a memory device including a one-time programmable (OTP) cell array configured to include at least one of a protected area and a programmable area are disclosed. The method includes receiving a fuse-program command to initiate a fuse-programming operation; checking whether the programmable area exists in the OTP cell array, terminating the fuse-programming operation when the OTP cell array does not include the programmable area, performing a fuse-programming operation on the programmable area when the OTP cell array includes the programmable area thereby programming fuses to create a fuse-programmed area; setting the fuse-programmed area of the OTP cell array as the protected area.
申请公布号 US2014219000(A1) 申请公布日期 2014.08.07
申请号 US201314107199 申请日期 2013.12.16
申请人 Samsung Electronics Co., Ltd. 发明人 OH Chi-Sung;PARK Chul-Sung;HEO Nak-Won;SOHN Dong-Hyun
分类号 G11C17/16;G11C29/52;G06F12/14 主分类号 G11C17/16
代理机构 代理人
主权项 1. A method of programming a memory device including a one-time programmable (OTP) cell array configured to include at least one of a protected area and a programmable area, the method comprising: receiving a fuse-program command to initiate a fuse-programming operation; checking whether the programmable area exists in the OTP cell array; terminating the fuse-programming operation when the OTP cell array does not include the programmable area; performing a fuse-programming operation on the programmable area when the OTP cell array includes the programmable area thereby programming fuses to create a fuse-programmed area; setting the fuse-programmed area of the OTP cell array as the protected area.
地址 Suwon-si KR