INTERCONNECT STRUCTURE AND METHOD OF MAKING SAME

摘要

An interconnect structure and method of fabricating the same is provided. More specifically, the interconnect structure is a defect free capped interconnect structure. The structure includes a conductive material formed in a trench of a planarized dielectric layer which is devoid of cap material. The structure further includes the cap material formed on the conductive material to prevent migration. The method of forming a structure includes selectively depositing a sacrificial material over a dielectric material and providing a metal capping layer over a conductive layer within a trench of the dielectric material. The method further includes removing the sacrificial material with any unwanted deposited or nucleated metal capping layer thereon.

主权项

1. A structure, comprising:
a conductive layer formed in a trench of a planarized dielectric layer, a top surface of the conductive layer being at a coplanar level as a top surface of the dielectric layer; a liner completely lining sidewalls and a bottom of the trench; a sacrificial layer formed selective to an exposed surface of the planarized dielectric layer; a cap layer formed on the conductive layer to prevent migration, the planarized dielectric layer being devoid of the cap layer, and the cap layer being in physical contact with the conductive layer; and unwanted deposition and/or rogue nucleation material formed on the sacrificial layer, wherein the unwanted deposition and/or rogue nucleation is a same material as the cap layer.