DOUBLE PATTERNING METHOD FOR SEMICONDUCTOR DEVICES

摘要

A method of fabricating a semiconductor device is disclosed. The exemplary method includes providing a substrate including a device layer and a sacrificial layer formed over the device layer and patterning the sacrificial layer thereby defining a cut pattern. The cut pattern of the sacrificial layer having an initial width. The method further includes depositing a mask layer over the device layer and over the cut pattern of the sacrificial layer. The method further includes patterning the mask layer thereby defining a line pattern including first and second portions separated by the cut pattern of the sacrificial layer and selectively removing the cut pattern of the sacrificial layer thereby forming a gap that separates the first and second portions of the line pattern of the mask layer. The method further includes patterning the device layer using the first and second portions of the line pattern of the mask layer.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate; a first plurality of gate stacks disposed over the substrate and extending longitudinally in a first direction; a second plurality of gate stacks disposed over the substrate and extending longitudinally in the first direction; a first gap separating an end portion of a first gate stack of the first plurality of gate stacks from an opposing end portion of a second gate stack of the first plurality of gate stacks, the first gap including a first width less than or equal to about 22 nm; and a second gap separating an end portion of a first gate stack of the second plurality of gate stacks from an opposing an end portion of a second gate stack of the second plurality of gate stacks, the second gap including a second width less than or equal to about 22 nm, wherein the first gap and the second gap are aligned and correspond to a cut line extending longitudinally in a second direction perpendicular to the first direction.