Integrated Circuit with Power and Sense Transistors

摘要

An integrated circuit may include a semiconductor portion with a power transistor including first gate trenches that cross a first region and a sense transistor including second gate trenches that cross a second region. Each gate trench extends in a longitudinal direction and comprises a gate electrode and a field electrode. The first and second regions are arranged along the longitudinal direction. A first termination trench intersects at least the second gate trenches in a third region between the first and second regions. The first termination trench includes a first conductive structure that is electrically connected to the field electrodes in the second gate trenches. The characteristics of the sense transistor formed in the second region reliably and precisely replicate the characteristics of the power transistor.

主权项

1. An integrated circuit, comprising a semiconductor portion, the semiconductor portion comprising:
a power transistor including first gate trenches crossing a first region and a sense transistor including second gate trenches crossing a second region, wherein each gate trench extends in a longitudinal direction and comprises a gate electrode and a field electrode and wherein the first and second regions are arranged along the longitudinal direction given by a longitudinal axis of the gate trenches; and a first termination trench intersecting at least the second gate trenches in a third region separating the first and second regions, the first termination trench including a first conductive structure electrically connected to the field electrodes in the second gate trenches.