发明名称 PLASMA DEVICE AND METHOD OF MANUFACTURING CARBON THIN FILM USING THE SAME
摘要 <p>PROBLEM TO BE SOLVED: To provide a plasma device capable of continuing a film deposition process for a carbon thin film for a long time.SOLUTION: A plasma device 10 includes a vacuum container 1, an arc type evaporation source 3, a cathode member 4, a shutter 5, a power source 7, a trigger electrode 8, a sending-out mechanism 15, and a cutting mechanism 16. The arc type evaporation source 3 is formed in a hollow columnar shape, and fixed to an insulation member 13. The cathode member 4 is made of laminate carbon or glassy carbon, and arranged in the vacuum container 1 and the arc type evaporation source 3 through a through hole 1A. The power source 7 applies a negative voltage to the arc type evaporation source 3. The trigger electrode 8 comes into contact with the cathode member 4 or leaves it. The sending-out mechanism 15 sends the cathode member 4 out to the side of a substrate 20 once the cutting mechanism 16 cuts a front end part of the cathode member 4 on the side of the substrate 20. The cutting mechanism 16 cuts a front end part of the cathode member 4 each time the elapsed time from the start of an arc discharge reaches a desired timing.</p>
申请公布号 JP2014141697(A) 申请公布日期 2014.08.07
申请号 JP20130009377 申请日期 2013.01.22
申请人 NISSIN ELECTRIC CO LTD 发明人 MIKAMI TAKASHI ; KATO KENJI ; SON WANG-QI ; OHARA HISANORI
分类号 C23C14/24;C23C14/06 主分类号 C23C14/24
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