发明名称 |
METHODS FOR MANUFACTURING RESIN STRUCTURE AND MICRO-STRUCTURE |
摘要 |
A resin structure for the formation of a micro-structure is manufactured by (A) applying a composition comprising a polymer, a photoacid generator, an epoxy compound, and an organic solvent onto a substrate, (B) heating the composition to form a sacrificial film, (C) exposing imagewise the film to first high-energy radiation, (D) developing the film in an alkaline developer to form a sacrificial film pattern, (E) exposing the sacrificial film pattern to UV as second high-energy radiation, and (F) heating the substrate at 80-250° C. The exposure dose of first high-energy radiation in step (C) is up to 250 mJ/cm2. At the end of step (F), the sacrificial film has a sidewall angle of 80°-90° relative to the substrate. |
申请公布号 |
US2014220497(A1) |
申请公布日期 |
2014.08.07 |
申请号 |
US201414154257 |
申请日期 |
2014.01.14 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
Hirano Yoshinori;Iio Masashi;Yanagisawa Hideyoshi |
分类号 |
G03F7/20 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
1. A method for manufacturing a resin structure for the formation of a micro-structure, comprising the steps of:
(A) applying an optically patternable film-forming composition onto a substrate, said composition comprising (1) a polymer having some phenolic hydroxyl groups protected with an acid-labile protective group, (2) a photoacid generator, (3) an epoxy compound containing at least two epoxy groups and having a molecular weight of 200 to 3,000, and (4) an organic solvent, (B) heating the composition on the substrate to form an optically patternable sacrificial film having a thickness of 1 to 30 μm, (C) exposing the sacrificial film to first high-energy radiation in accordance with a pattern layout image, (D) developing the sacrificial film in an alkaline developer to form a sacrificial film pattern, (E) exposing the sacrificial film pattern to second high-energy radiation which is ultraviolet radiation, and (F) heating the substrate at 80 to 250° C., wherein the exposure dose of first high-energy radiation in step (C) is up to 250 mJ/cm2, and at the end of step (F), the sacrificial film has a sidewall which maintains an angle of 80° to 90° relative to the substrate. |
地址 |
Tokyo JP |