发明名称 SEMICONDUCTOR SYSTEM
摘要 In some aspects of the invention, multiple insulating substrates each mounting thereon at least one each of at least four semiconductor devices that form at least one of three-level electric power inverter circuits and a base plate on the one surface of which a plurality of the insulating plates are arranged are provided. On the one surface of the base plate, at least four regions are established and multiple insulating substrates are arranged to be distributed so that at least one each of the at least four semiconductor devices is arranged in each of the four regions established on the base plate. This can make the semiconductor devices arranged to be distributed so that heat generating sections determined according to the operation mode of the semiconductor system comes to be partial to disperse generated heat, by which a semiconductor system is provided which can enhance heat dispersion efficiency.
申请公布号 US2014218991(A1) 申请公布日期 2014.08.07
申请号 US201414157025 申请日期 2014.01.16
申请人 FUJI ELECTRIC CO., LTD. 发明人 CHEN Shuangching;ICHIKAWA Hiroaki
分类号 H02M7/537;H02M7/00 主分类号 H02M7/537
代理机构 代理人
主权项 1. A semiconductor system comprising: a first semiconductor device, a second semiconductor device, a third semiconductor device and a fourth semiconductor device, the semiconductor devices being at least four devices forming at least one of three-level electric power inverter circuits; a plurality of insulating substrates on each of which at least one each of the first semiconductor device to the fourth semiconductor devices is mounted; and a base plate on the surface of which a plurality of the insulating substrates are arranged, wherein the surface of the base plate on which a plurality of the insulating substrates are arranged has four regions established into which the surface is divided in grid-like, and wherein a plurality of the insulating substrates are arranged so that at least one each of the first semiconductor devices to the fourth semiconductor devices is arranged in each of the four regions to thereby disperse heat generated in the first to fourth semiconductor devices.
地址 Kawasaki-shi JP