METHOD FOR PRODUCING AN EPITAXIAL SEMICONDUCTOR LAYER

摘要

The invention relates to a method for producing an epitaxial layer made of a semiconductor material, in which at least one surface region of a monocrystalline substrate is first of all subjected to dry etching inside a working chamber. A non-epitaxial semiconductor layer is then deposited on the etched surface region of the monocrystalline substrate by vaporizing a semiconductor material using an electron beam, as a result of which vapour particles of the vaporized semiconductor material are deposited on the etched surface region of the monocrystalline substrate. The non-epitaxial semiconductor layer is finally crystallized by inputting energy.