PRODUCTION METHOD OF SOI WAFER, AND SOI WAFER

摘要

The present invention is a production method of an SOI wafer for producing an SOI wafer, which is characterized in that: after subjecting a bonding surface of a bond wafer and/or a bonding surface of a base wafer to a plasma treatment, the bond wafer and the base wafer are bonded with each other with an oxide film being interposed therebetween; and the bond wafer is separated at an ion-implanted layer by a separation heat treatment by performing a first step wherein a heat treatment at a temperature of 250°C or less is carried out for 2 hours or more and a second step wherein a heat treatment at a temperature from 400°C to 450°C (inclusive) is carried out for 30 minutes or more. Consequently, there can be provided a method for producing an SOI wafer which has a small SOI layer thickness range, a low surface roughness in the SOI layer surface and a terrace part with a smooth shape, while having no defects such as voids and blisters in the SOI layer.