METHODS FOR PLASMA PROCESSING

摘要

Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider.

主权项

1. A method for plasma-based deposition of thin films on a substrate, said method comprising:
providing a chamber, connecting it to a vacuum pump and maintaining a gas pressure in a range of 50 Pascals to 2000 Pascals in said chamber; positioning a plurality of electrodes within said chamber whose lengths are greater than their width or height, so that a first gap is formed between at least two said electrodes; and positioning a support for substrates so that said electrodes have a front side facing said support; placing a substrate on said support such that a side of said substrate to be coated faces said electrodes, and such that the minimum gap between a said electrode and said supported substrate on said support is less than the electrode width and less than four times the minimum size of said first gap; maintaining said substrate at a temperature less than 200° C.; injecting a first gas into said first gap between opposing faces of said electrodes to flow towards said substrate; providing AC power to at least one of said electrodes to form a plasma by activating said first gas in the space between said electrodes and forming a plasma between said electrode and substrate providing ion bombardment of said substrate; injecting a second gas from at least one of said electrodes into said flowing activated first gas to form a mixed gas; and wherein said mixed gas flows adjacent said front side of said electrode without recirculation to deposit said thin film on said substrate and then flows to an exhaust.