METHOD AND SYSTEM FOR TREATMENT OF DEPOSITION REACTOR

摘要

A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.

主权项

1. A method of treating a deposition reactor, the method comprising the steps of:
providing a metal halide chemistry to a reaction chamber of the deposition reactor; providing a metal CVD precursor selected from the group consisting of organometallic compound chemistry and aluminum CVD compound chemistry to the reaction chamber; forming a doped metal film comprising one or more of B, C, Si N; optionally removing the substrate; providing a treatment reactant chemistry to the reaction chamber; exposing the reaction chamber to the treatment reactant chemistry to mitigate formation of particles comprising decomposition products of the metal CVD precursor; and purging the reaction chamber.