发明名称 |
TRENCH ISOLATION FOR BICMOS BIPOLAR JUNCTION TRANSISTORS |
摘要 |
<p>Device structures, fabrication methods, and design structures for a bipolar junction transistor. A first isolation structure is formed in a substrate to define a boundary for a device region. A collector is formed in the device region, and a second isolation structure is formed in the device region. The second isolation structure defines a boundary for the collector. The second isolation structure is laterally positioned relative to the first isolation structure to define a section of the device region between the first and second isolation structures.</p> |
申请公布号 |
WO2014121022(A1) |
申请公布日期 |
2014.08.07 |
申请号 |
WO2014US14056 |
申请日期 |
2014.01.31 |
申请人 |
INTERNATIONAL BUSINSS MACHINES CORPORATION |
发明人 |
DUNN, JAMES, S.;LIU, QIZHI |
分类号 |
H01L29/70;H01L21/02;H01L21/8222 |
主分类号 |
H01L29/70 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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