| 摘要 |
PURPOSE: A nonvolatile memory device is provided to minimize the interference between the neighboring cells by including a first storage film and a second storage film. CONSTITUTION: A tunnel insulating layer is formed on the substrate. A blocking insulation film(220) is formed on the tunnel insulating layer. A control gate electrode is formed on the blocking insulation film. A first charge storage layer(210) and a second charge storage layer(215) are formed between the tunnel insulating layer and blocking insulation film. The first charge storage layer comprises an insulating material having a trap storing electric charges. A second charge storage layer comprises the conductive charge storage material. |
