| 摘要 |
A solid-state imaging device including a number of pixels, each of which having a photoelectric converting portion, and which are arranged one-dimensionally or in a two-dimensional matrix. The solid-state imaging device includes a peripheral wiring portion with a multilayer structure provided around at least part of the photoelectric converting portion in each of the number of pixels and a light-shielding interlayer connecting material connecting layers of the multilayer structure to each other at least part of the peripheral wiring portion. The light-shielding interlayer connecting material is capable of reflecting or absorbing visible light. |
