| 摘要 |
<p>A pattern-forming method includes applying a photoresist composition to a substrate to form a resist film. The photoresist composition includes an acid generator and a first polymer that includes an acid-dissociable group. The resist film is exposed. The resist film is developed using a developer having an organic solvent content of 80 mass % or more to form a prepattern of the resist film. A polymer film having a phase separation structure in a space defined by the prepattern is formed using a composition that includes a plurality of second polymers. A part of the phase separation structure of the polymer film is removed.</p> |
