发明名称 |
Rare-earth oxide isolated semiconductor fin |
摘要 |
<p>A dielectric template layer is deposited on a substrate. Line trenches are formed within the dielectric template layer by an anisotropic etch that employs a patterned mask layer. The patterned mask layer can be a patterned photoresist layer, or a patterned hard mask layer that is formed by other image transfer methods. A lower portion of each line trench is filled with an epitaxial rare-earth oxide material by a selective rare-earth oxide epitaxy process. An upper portion of each line trench is filled with an epitaxial semiconductor material by a selective semiconductor epitaxy process. The dielectric template layer is recessed to form a dielectric material layer that provides lateral electrical isolation among fin structures, each of which includes a stack of a rare-earth oxide fin portion and a semiconductor fin portion.</p> |
申请公布号 |
GB2510525(A) |
申请公布日期 |
2014.08.06 |
申请号 |
GB20140008644 |
申请日期 |
2012.11.12 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
KANGGUO CHENG;JOSEPH ERVIN;CHENGWEN PEI;RAVI M TODI;GENG WANG |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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