发明名称 |
NON-PLANAR TRANSISTORS AND METHODS OF FABRICATION THEREOF |
摘要 |
The present description relates to the formation source/drain structures within non-planar transistors, wherein fin spacers are removed from the non-planar transistors in order to form the source/drain structures from the non-planar transistor fins or to replace the non-planar transistor fins with appropriate materials to form the source/drain structures. |
申请公布号 |
EP2761647(A1) |
申请公布日期 |
2014.08.06 |
申请号 |
EP20110872969 |
申请日期 |
2011.09.30 |
申请人 |
INTEL CORPORATION |
发明人 |
JOSHI, SUBHASH M.;HATTENDORF, MICHAEL |
分类号 |
H01L21/336;H01L29/66;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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