| 摘要 |
<p>Provided is a sputtering target and method for producing the same, capable of satisfactorily depositing a film comprising Na-doped Cu-In-Ga-Se by sputtering. This invention has a component composition that: contains Cu, In, Ga, and Se; contains Na in at least one state of either an NaF compound, an Na2S compound or an Na2Se compound, in the ratio of Na/(Cu+In+Ga+Se+Na)×100:0.05-5 at%; has an oxygen concentration of 200-2000 wt ppm; and has unavoidable impurities constituting the remainder.</p> |
