发明名称 |
SOLID-STATE ELECTRONIC DEVICE |
摘要 |
<p>A solid-state electronic device according to the present invention includes: an oxide layer (possibly containing inevitable impurities) that is formed by heating, in an atmosphere containing oxygen, a precursor layer obtained from a precursor solution as a start material including both a precursor containing bismuth (Bi) and a precursor containing niobium (Nb) as solutes, the oxide layer consisting of the bismuth (Bi) and the niobium (Nb); wherein the oxide layer is formed by heating at a heating temperature from 520° C. to 650° C.</p> |
申请公布号 |
KR20140097196(A) |
申请公布日期 |
2014.08.06 |
申请号 |
KR20147013691 |
申请日期 |
2012.10.25 |
申请人 |
JAPAN SCIENCE AND TECHNOLOGY AGENCY |
发明人 |
SHIMODA TATSUYA;TOKUMITSU EISUKE;ONOUE MASATOSHI;MIYASAKO TAKAAKI |
分类号 |
H01L21/316;H01L21/324;H01L21/822;H01L27/04 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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