| 摘要 |
<p>A schottky barrier diode may include a first n−type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate, a first p+ region disposed in the first n−type epitaxial layer, a second n type epitaxial layer disposed on the first n−type epitaxial layer and the first p+ region, a second p+ region disposed in the second n type epitaxial layer, a schottky electrode disposed on the second n type epitaxial layer and the second p+ region, and an ohmic electrode disposed on a second surface of the n+ type silicon carbide substrate, wherein the first p+ region and the second p+ region may be in contact with each other.</p> |
