| 摘要 |
<p>The present invention relates to a semiconductor memory device and, more particularly, to a semiconductor memory device which includes a magnetic element. The magnetic element according to the embodiment of the present invention includes a reference layer, a free layer, a barrier layer which is located between the reference layer and the reference layer, a first electrode, an insulation layer which is located between the first electrode and the free layer, and a second electrode which is connected to the side of the free layer. According to the present invention, a small amount of currents are used and an error rate is reduced.</p> |
