| 摘要 |
A nitride semiconductor element and a manufacturing method thereof are disclosed. The embodiments of the present invention form a spacer using aluminum nitride to minimize a channel region in which electron concentration is reduced and compensate current reduction in the implementation of a normally-off type. The embodiments of the present invention prevent deterioration of a two-dimensional electron gas when a high-resistance channel layer including a high-resistance layer is being formed using an acceptor trap such as carbon. The embodiments of the present invention reduce deterioration of features of a two-dimensional electron gas channel using an active layer made of un-doped nitride and at the same time prevent changes in an energy band, such as reduction of the two-dimensional electron gas channel as the energy band of the two-dimensional electron gas channel raises, using the spacer. |
