| 摘要 |
A solid-state image sensor includes a first semiconductor region (13) of a first conductivity type, a second semiconductor region (14) of a second conductivity type that is arranged to contact a lower face of the first semiconductor region (13) and functions as a charge accumulation region, a third semiconductor region (15) including side faces surrounded by the second semiconductor region (14), a fourth semiconductor region (3) of the second conductivity type that is arranged apart from the second semiconductor region (14), and a transfer gate (4) that forms a channel to transfer charges accumulated in the second semiconductor region (14) to the fourth semiconductor region (3). The third semiconductor region (15) is one of a semiconductor region of the first conductivity type and a semiconductor region of the second conductivity type whose impurity concentration is lower than that in the second semiconductor region (14). |
