Improved low resistance contacts for semiconductor devices

摘要

The invention provides a method of forming at least one Metal Germanide contact on a Germanium (Ge) substrate for providing a semiconducting device (100) by providing a first layer (120) of Germanium (Ge) and a second layer of metal. The invention provides a step of reacting the second layer with the first layer with high energy density pulses for obtaining a Germanide metal layer (160A) having a substantially planar interface with the underlying first (Ge) layer.