发明名称 COMPOSITE PROTECTIVE LAYER FOR PHOTOELECTRODE STRUCTURE, PHOTOELECTRODE STRUCTURE COMPRISING THE COMPOSITE PROTECTIVE LAYER FOR PHOTOELECTRODE STRUCTURE AND PHOTOELECTOCHEMICAL CELL INCLUDING THE SAME
摘要 Disclosed are a composite protective layer for a photoelectrode structure, a photoelectrode structure comprising the same and a photoelectochemical cell including the same. The composite protective layer for a photoelectrode structure includes a chemical protection layer; and a physical protection layer. The chemical protection layer has corrosion charge per unit time, 0.1 C/cm2 or less in a water decomposition potential. The physical protection layer has conductivity and moisture transmission, 0.001 g/m2/day or less.
申请公布号 KR20140096916(A) 申请公布日期 2014.08.06
申请号 KR20130010097 申请日期 2013.01.29
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, TAE GON;LEE, JEONG HEE;IM, SEOUNG JAE;KIM, TAE HYUNG
分类号 H01M14/00 主分类号 H01M14/00
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