发明名称 DEVICE ACTIVE CHANNEL LENGTH/WIDTH GREATER THAN CHANNEL LENGTH/WIDTH
摘要 In some examples, a transistor includes a drain, a channel, and a gate. The channel surrounds the drain and has a channel length to width ratio. The gate is over the channel to provide an active channel region that has an active channel region length to width ratio that is greater than the channel length to width ratio.
申请公布号 EP2710637(A4) 申请公布日期 2014.08.06
申请号 EP20110865566 申请日期 2011.05.19
申请人 HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. 发明人 BENJAMIN, TRUDY
分类号 H01L29/78;H01L21/336;H01L29/66 主分类号 H01L29/78
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