| 摘要 |
A method comprising providing: a bowed substrate of synthetic diamond material 2, the bowed substrate being bowed by an amount and comprising a convex face and a concave face; growing a layer of compound semiconductor material 8 on the convex face of the bowed substrate via a chemical vapour deposition (CVD) technique to form a bowed composite semiconductor, the compound semiconductor material having a higher average thermal expansion coefficient than the diamond material between the growth temperature and room temperature providing a thermal expansion mismatch; and cooling the bowed composite semiconductor component, wherein the layer of compound semiconductor material contracts more than the wafer of synthetic diamond material during cooling due to the thermal expansion mismatch, wherein the layer of compound semiconductor material contracts on cooling by an amount which off-sets bowing in the bowed substrate thus pulling the bowed composite semiconductor component into a flat configuration, the layer of compound semiconductor material having a low tensile stress after cooling. |
