SILICON CARBIDE SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

A method for manufacturing a silicon carbide semiconductor device, comprising the steps of: preparing a silicon carbide semiconductor including a first surface having at least a portion into which an impurity is implanted; forming a second surface thereof by cleaning said first surface of said silicon carbide semiconductor; forming a silicon-containing film on said second surface; and forming an oxide film constituting the silicon carbide semiconductor device, by oxidizing said silicon-containing film, said first surface being cleaned by means of a process for forming an oxide film on said first surface using at least one of a solution containing oxygen, thermal oxidation in an atmosphere containing oxygen gas, and oxygen plasma, and then removing said oxide film.