| 发明名称 |
Dielectric layer for flash memory device and method for manufacturing thereof |
| 摘要 |
<p>The present invention is directed to rare-earth aluminate dielectric material and layer which are particularly suitable for non-volatile memory applications and in particular for integration in flash memory devices.</p> |
| 申请公布号 |
EP2337064(B1) |
申请公布日期 |
2014.08.06 |
| 申请号 |
EP20100193520 |
申请日期 |
2010.12.02 |
| 申请人 |
IMEC |
发明人 |
ADELMANN, CHRISTOPH;SWERTS, JOHAN;VAN ELSHOCHT, SVEN;KITTL, JORGE |
| 分类号 |
H01L21/316;H01L21/02;H01L21/28;H01L29/423;H01L29/788;H01L29/792 |
主分类号 |
H01L21/316 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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