The present invention provides a photovoltaic device comprising:
a substrate (110);
a first (151) and a second electrode (152); and
a gap insulation layer (160) between the two electrodes and on the substrate;
wherein the gap insulation layer comprises a portion (161) that has a higher silicon content to the rest (162) of the gap insulation layer and the portion with the higher silicon content is closer to the substrate.
申请公布号
EP2605287(A3)
申请公布日期
2014.08.06
申请号
EP20120185558
申请日期
2012.09.21
申请人
SAMSUNG SDI CO., LTD.
发明人
SEO, KYOUNG-JIN;JEONG, BYONG-GOOK;KIM, HYUN-JONG;PARK, MIN;LEE, CZANG-HO;LEE, SANG-WON