发明名称 CMOS gas sensor and method for manufacturing the same
摘要 A CMOS gas sensor comprises a membrane (13) extending over an opening (12) of a silicon substrate (1). A patch (2) of sensing material is arranged on the membrane (13) and in contact with electrodes (3) of platinum. A heater (5) of tungsten is located in or on the membrane (13) at the location of the patch (2) of metal-oxide sensing material. Combining platinum electrodes (3) with a tungsten heater (5) on top of a CMOS structure provides a gas sensor of high reliability and stability.
申请公布号 EP2762866(A1) 申请公布日期 2014.08.06
申请号 EP20130405019 申请日期 2013.01.31
申请人 SENSIRION HOLDING AG 发明人 BÜHLER, JOHANNES;KUEMIN, CYRILL
分类号 G01N27/12 主分类号 G01N27/12
代理机构 代理人
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