发明名称 |
CMOS gas sensor and method for manufacturing the same |
摘要 |
A CMOS gas sensor comprises a membrane (13) extending over an opening (12) of a silicon substrate (1). A patch (2) of sensing material is arranged on the membrane (13) and in contact with electrodes (3) of platinum. A heater (5) of tungsten is located in or on the membrane (13) at the location of the patch (2) of metal-oxide sensing material. Combining platinum electrodes (3) with a tungsten heater (5) on top of a CMOS structure provides a gas sensor of high reliability and stability. |
申请公布号 |
EP2762866(A1) |
申请公布日期 |
2014.08.06 |
申请号 |
EP20130405019 |
申请日期 |
2013.01.31 |
申请人 |
SENSIRION HOLDING AG |
发明人 |
BÜHLER, JOHANNES;KUEMIN, CYRILL |
分类号 |
G01N27/12 |
主分类号 |
G01N27/12 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|