发明名称 Field effect transistor
摘要 <p>A semiconductor device has a shield plate electrode short-circuited to a source electrode near the drain electrode. The shield plate electrode is connected to the source terminal electrode which has a VIA hole via the first line of air-bridge structure or overlay structure. </p>
申请公布号 EP2634808(A3) 申请公布日期 2014.08.06
申请号 EP20130156852 申请日期 2013.02.26
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 YAMAURA, TAKUJI
分类号 H01L29/40;H01L29/417;H01L29/423;H01L29/772;H01L29/778 主分类号 H01L29/40
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