发明名称 RAW MATERIAL GAS SUPPLY DEVICE, FILM FORMING APPARATUS, FLOW RATE MEASURING METHOD, AND STORAGE MEDIUM
摘要 The present invention provides a source gas supply device capable of measuring the flow rate of a source material even if the concentration of the source material in the source gas is changed. The source gas supply device includes: a source material container used for a film forming device to form a thin film on a substrate to receive a liquid or solid source material; a carrier gas supply unit to supply carrier gas to a space in the source container, which receives the source material, through a carrier gas passage; a first flow rate measuring unit to measure a first flow rate measurement value corresponding to the flow rate of the carrier gas flowing through the carrier gas passage; a source gas supply path to supply the source gas including an evaporated source material to the film forming device from the source material container; a second flow rate measuring unit to measure a second flow rate measurement value of the source gas flowing through the source gas supply path; and a flow rate calculating unit to calculate a difference value between the first flow rate measurement value obtained from the first flow rate measuring unit and the second flow rate measurement value obtained from the second flow rate measuring unit and to convert the difference value into an evaporation flow rate of the source material.
申请公布号 KR20140097011(A) 申请公布日期 2014.08.06
申请号 KR20140008465 申请日期 2014.01.23
申请人 TOKYO ELECTRON LIMITED 发明人 INOUE MITSUYA;TAKADO MAKOTO;ANDO ATSUSHI
分类号 H01L21/205 主分类号 H01L21/205
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