| 发明名称 |
Bulk acoustic resonator comprising piezoelectric layer and inverse piezoelectric layer |
| 摘要 |
In a representative embodiment, a bulk acoustic wave (BAW) resonator, comprises: a first electrode disposed over a substrate; a first piezoelectric layer disposed over the first electrode, the first piezoelectric layer having a first c-axis oriented along a first direction; a second electrode disposed over the first piezoelectric layer; and a second piezoelectric layer disposed over the first electrode and adjacent to the first piezoelectric layer, wherein the second piezoelectric layer has a second c-axis oriented in a second direction that is substantially antiparallel to the first direction. |
| 申请公布号 |
US8796904(B2) |
申请公布日期 |
2014.08.05 |
| 申请号 |
US201113286051 |
申请日期 |
2011.10.31 |
| 申请人 |
Avago Technologies General IP (Singapore) Pte. Ltd. |
发明人 |
Burak Dariusz;Grannen Kevin J.;Larson, III John D.;Shirakawa Alexandre |
| 分类号 |
H01L41/08;H03H9/58 |
主分类号 |
H01L41/08 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A bulk acoustic wave (BAW) resonator structure, comprising:
a first electrode disposed over a substrate; a first piezoelectric layer disposed over the first electrode, the first piezoelectric layer having a first c-axis oriented along a first direction; a second piezoelectric layer disposed over the first electrode, wherein the second piezoelectric layer has a second c-axis oriented in a second direction that is substantially antiparallel to the first direction; and a second electrode disposed over the first piezoelectric layer and over the second piezoelectric layer, the second electrode being in direct contact with the first piezoelectric and in direct contact with the second piezoelectric layer. |
| 地址 |
Singapore SG |
