Method for fabricating semiconductor device by damascene process

摘要

A method for fabricating a semiconductor device includes forming a plurality of isolation patterns, isolated from each other by a plurality of trenches, over an underlying structure; forming a plurality of conductive lines filled in the trenches, forming contact holes by removing first portions of the isolation patterns, wherein the contact holes are defined by the plurality of conductive lines and second portions of the isolation patterns that remain after removing of the first portions of the isolation patterns, and forming plugs filled in the contact holes.

主权项

1. A method for fabricating a semiconductor device, the method comprising:
forming a plurality of sacrificial patterns, isolated from each other by a plurality of trenches, over an underlying structure; forming a plurality of conductive lines filled in the trenches; forming first holes by removing portions of the sacrificial patterns, wherein remaining portions of the sacrificial patterns as a whole extend in a direction crossing the conductive lines, and the first holes are defined by the plurality of conductive lines and the remaining portions of the sacrificial patterns; forming isolation patterns filled in the first holes; forming contact holes by removing the remaining portions of the sacrificial patterns, wherein the contact holes are defined by the plurality of conductive lines and the isolation patterns; and forming plugs filled in the contact holes.