发明名称 Semiconductor structure
摘要 Micro-Electro-Mechanical System (MEMS) structures, metrology structures and methods of manufacture are disclosed. The method includes forming one or metrology structure, during formation of a device in a chip area. The method further includes venting the one or more metrology structure after formation of the device.
申请公布号 US8796058(B2) 申请公布日期 2014.08.05
申请号 US201113287575 申请日期 2011.11.02
申请人 International Business Machines Corporation 发明人 Herrin Russell T.;Miga Daniel R.;Stamper Anthony K.
分类号 H01L29/84;H01L21/02 主分类号 H01L29/84
代理机构 Roberts Mlotkowski Safran & Cole, P.C. 代理人 Canale Anthony;Roberts Mlotkowski Safran & Cole, P.C.
主权项 1. A method comprising: forming one or more metrology structure, during formation of a device in a chip area; venting the one or more metrology structure after formation of the device; forming at least one of an insulator and conductor material over the sacrificial material and the one or more metrology structure; forming at least one vent hole in the at least one of insulator and conductor material to expose the sacrificial material and the one or more metrology structure; and sealing the at least one vent hole over the vented sacrificial material after the venting, wherein: the one or more metrology structure and sacrificial material are vented through the at least one vent hole; the device is a Micro-Electro-Mechanical System (MEMS) structure, and the one or more metrology structure is formed simultaneously with the sacrificial material used to form one or more cavities of the MEMS structure.
地址 Armonk NY US