发明名称 |
Semiconductor structure |
摘要 |
Micro-Electro-Mechanical System (MEMS) structures, metrology structures and methods of manufacture are disclosed. The method includes forming one or metrology structure, during formation of a device in a chip area. The method further includes venting the one or more metrology structure after formation of the device. |
申请公布号 |
US8796058(B2) |
申请公布日期 |
2014.08.05 |
申请号 |
US201113287575 |
申请日期 |
2011.11.02 |
申请人 |
International Business Machines Corporation |
发明人 |
Herrin Russell T.;Miga Daniel R.;Stamper Anthony K. |
分类号 |
H01L29/84;H01L21/02 |
主分类号 |
H01L29/84 |
代理机构 |
Roberts Mlotkowski Safran & Cole, P.C. |
代理人 |
Canale Anthony;Roberts Mlotkowski Safran & Cole, P.C. |
主权项 |
1. A method comprising:
forming one or more metrology structure, during formation of a device in a chip area; venting the one or more metrology structure after formation of the device; forming at least one of an insulator and conductor material over the sacrificial material and the one or more metrology structure; forming at least one vent hole in the at least one of insulator and conductor material to expose the sacrificial material and the one or more metrology structure; and sealing the at least one vent hole over the vented sacrificial material after the venting, wherein: the one or more metrology structure and sacrificial material are vented through the at least one vent hole; the device is a Micro-Electro-Mechanical System (MEMS) structure, and the one or more metrology structure is formed simultaneously with the sacrificial material used to form one or more cavities of the MEMS structure. |
地址 |
Armonk NY US |