发明名称 Integrated circuits with bi-directional charge pumps
摘要 A method includes receiving a first voltage at a first input circuit of a bi-directional charge pump circuit, selectively turning on a first switch of a switching circuit that is coupled electrically to a deep N-well transistor of a first set of one or more intermediate pump stages that are coupled between the first input circuit and a first output circuit, and providing a third voltage from the first output circuit in response to receiving a second voltage at an input of a first diode of the output circuit from the first set of the one or more intermediate pump stages.
申请公布号 US8797091(B2) 申请公布日期 2014.08.05
申请号 US201313855006 申请日期 2013.04.02
申请人 Taiwan Semiconductor Manufacturing Co., Ltd. 发明人 Lin Yvonne;Yang Tien-Chun
分类号 G05F1/10;G05F3/02 主分类号 G05F1/10
代理机构 Duane Morris LLP 代理人 Duane Morris LLP
主权项 1. A method, comprising: receiving a first voltage at a first input circuit of a bi-directional charge pump circuit; selectively turning on a first switch of a switching circuit that is coupled electrically to a deep N-well transistor of a first set of one or more intermediate pump stages that are coupled between the first input circuit and a first output circuit; providing a third voltage from the first output circuit in response to receiving a second voltage at an input of a first diode of the output circuit from the first set of the one or more intermediate pump stages; receiving the third voltage at a second input circuit of the bi-direction charge pump circuit; selectively turning on a second switch of the switching circuit that is coupled electrically to a deep n-well transistor of a second set of one or more intermediate pump stages that are coupled between the second input circuit and a second output circuit; and outputting a negative pump from the second output circuit in response to receiving a fourth voltage from the second set of one or more intermediate pump stages.
地址 Hsin-Chu TW