发明名称 Stacked semiconductor devices and fabrication method/equipment for the same
摘要 After formation of an opening by exposing and development of the photosensitive surface protection film and adhesive layer which is formed on the circuit side of the semiconductor wafer, the semiconductor chips having a photosensitive surface protection film and adhesive layer thereon is fabricated by cutting individual chips from the semiconductor wafer. After the second semiconductor chip is placed over the first semiconductor chip up by the suction collet, the second semiconductor chip is bonded with the first semiconductor chip by the first surface protection film and adhesive layer. The suction side of the suction collet has lower adhesion to the second semiconductor chip than that between the now bonded semiconductor chips.
申请公布号 US8796076(B2) 申请公布日期 2014.08.05
申请号 US201213600153 申请日期 2012.08.30
申请人 Kabushiki Kaisha Toshiba 发明人 Yoshimura Atsushi;Omizo Shoko
分类号 H01L21/00;H01L21/30 主分类号 H01L21/00
代理机构 Patterson & Sheridan, LLP 代理人 Patterson & Sheridan, LLP
主权项 1. A fabrication method of providing stacked semiconductor devices from a semiconductor wafer having multiple chip areas and dicing areas, comprising the steps of: forming a surface protection and adhesive layer onto a circuit side of the semiconductor wafer; forming an opening through the surface protection and adhesive layer to expose respective electrode pads on the circuit side of the multiple chip areas and the dicing areas; partitioning the semiconductor wafer into a plurality of individual chips that include first and second semiconductor chips; positioning a non-circuit side of the semiconductor wafer on a support sheet; holding a first semiconductor chip on a suction collet and removing the first semiconductor chip from the support sheet, positioning the first semiconductor chip on an adhesive layer of a receiving substrate, and heating the receiving substrate to bond the first semiconductor chip to the receiving substrate; and holding a second semiconductor chip on the suction collet and removing the second semiconductor chip from the support sheet, positioning the second semiconductor chip directly on the surface protection and adhesive layer of the first semiconductor chip, and bonding the first semiconductor chip to the second semiconductor chip, wherein the suction collet has a suction side with lower adhesion to the surface protection and adhesive layer than that between the first semiconductor chip and the second semiconductor chip.
地址 Tokyo JP
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