Methods of integrated shielding into MTJ device for MRAM

摘要

Methods and apparatus for shielding a shielding a non-volatile memory, such as shielding a magnetic tunnel junction (MTJ) device from a magnetic flux are provided. In an example, a shielding layer is formed adjacent to an electrode of an MTJ device, such that the shielding layer substantially surrounds a surface of the electrode, and a metal line is coupled to the shielding layer. The metal line can be coupled to the shielding layer by a via.

主权项

1. A method for protecting a magnetic tunnel junction (MTJ) device by utilizing an integrated shielding apparatus, comprising:
forming the MTJ device on a substrate, wherein the MTJ device comprises:
a first electrode;one or more pinned layers on the first electrode;a barrier layer on the one or more pinned layers;one or more free layers on the barrier layer;one or more hardmask layers on the one or more free layers; anda second electrode on the one or more hardmask layers; forming a shielding layer on a side surface of the second electrode, such that the shielding layer shields the one or more free layers, wherein the shielding layer does not substantially surround the side surface; and forming a metal line connection on the shielding layer.