| 发明名称 | Monolithic integration of group III nitride epitaxial layers | ||
| 摘要 | A monolithically integrated device includes a substrate, a first set of Group III nitride epitaxial layers grown for a first HFET on a first region of the substrate, and a second set of Group III nitride epitaxial layers for a second HFET grown on a second region of the substrate. | ||
| 申请公布号 | US8796736(B1) | 申请公布日期 | 2014.08.05 |
| 申请号 | US201313897038 | 申请日期 | 2013.05.17 |
| 申请人 | HRL Laboratories, LLC | 发明人 | Brown David F.;Shinohara Keisuke;Micovic Miroslav;Corrion Andrea |
| 分类号 | H01L29/66 | 主分类号 | H01L29/66 |
| 代理机构 | Ladas & Parry | 代理人 | Ladas & Parry |
| 主权项 | 1. A monolithically integrated device comprising: a substrate; a first set of Group III nitride epitaxial layers on the substrate for a first heterostructure field effect transistor; wherein a region of the first set of Group III nitride epitaxial layers comprises implanted ions; and a second set of Group III nitride epitaxial layers on the region comprising implanted ions for a second heterostructure field effect transistor. | ||
| 地址 | Malibu CA US | ||