MOS devices with strain buffer layer and methods of forming the same

摘要

A device includes a substrate, insulation regions extending into the substrate, and a semiconductor fin higher than top surfaces of the insulation regions. The semiconductor fin has a first lattice constant. A semiconductor region includes sidewall portions on opposite sides of the semiconductor fin, and a top portion over the semiconductor fin. The semiconductor region has a second lattice constant different from the first lattice constant. A strain buffer layer is between and contacting the semiconductor fin and the semiconductor region. The strain buffer layer includes an oxide.

主权项

1. A device comprising:
a substrate; insulation regions extending into the substrate; a semiconductor fin higher than top surfaces of the insulation regions, wherein the semiconductor fin has a first lattice constant; a semiconductor region having a second lattice constant different from the first lattice constant, wherein the semiconductor region comprises:
sidewall portions on opposite sides of the semiconductor fin; anda top portion over the semiconductor fin; and a strain buffer layer between and contacting the semiconductor fin and the semiconductor region, wherein the strain buffer layer comprises an oxide.